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A transparent boron-nitrogen thin film formed by plasma CVD out of the discharge region

Journal Article · · Plasma Chem. Plasma Process.; (United States)
DOI:https://doi.org/10.1007/BF00568979· OSTI ID:5351028
A transparent boron-nitrogen thin film of thickness 550 nm was successfully deposited out of the discharge region by rf plasma CVD. The deposition was performed with diborane (4.8vol % in N/sub 2/) as the reactant gas and argon as the carrier gas by an inductively coupled reactor at a frequency of 13.56 MHz. The transparant films could be obtained at a low presure of about 30 Pa, at a discharge power level of 30 W, and at room temperature without heating the substrate. The thin film obtained by rf plasma are compared with those obtained by microwave plasma. Both the refractive index and the deposition rate for the films deposited by microwave plasma are discussed according to the deposition conditions.
Research Organization:
Nagoya Univ., Nagoya
OSTI ID:
5351028
Journal Information:
Plasma Chem. Plasma Process.; (United States), Journal Name: Plasma Chem. Plasma Process.; (United States) Vol. 4:4; ISSN PCPPD
Country of Publication:
United States
Language:
English