Real time ellipsometric study of boron nitride thin film growth

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:470922

Bertran, E; Canillas, A; Campmany, J; El Kasmi, M; Pascual, E; Costa, J; Andujar, J L ^[1]

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1. Univ. de Barcelona (Spain). Dept. de Fisica Aplicada i Electronica

The authors present an in situ study of the growth of boron nitride thin films by real time ellipsometry. Films were produced in a PEVCD reactor by rf glow discharge decomposition of ammonia (pure) and diborane (1% in hydrogen), on in-Cr coated c-Si substrates placed either on the powered electrode or on the grounded electrode of the reactor. A fast phase-modulated ellipsometer performed the real time monitoring of the growth processes at 350 nm. The ellipsometric angle trajectories were obtained through an autocalibrated method, especially suitable for the in situ optical analysis of transparent thin films. The authors applied several thin film growth optical models (homogeneous, two-layer, surface roughness) to analyze parameters of the films such as refractive index, extinction coefficient, roughness and deposition rate. In all the cases studied, the two-layer model fits well with the ellipsometric measurements, but a more sophisticated model considering a variable refractive index could better describe these films.

• Sponsoring Organization: Comision Interministerial de Ciencia y Tecnologia (Spain)
• OSTI ID: 470922
• Report Number(s): CONF-951155--; ISBN 1-55899-313-4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMMONIA
BORANES
BORON NITRIDES
CHEMICAL VAPOR DEPOSITION
CHROMIUM ALLOYS
ELLIPSOMETRY
EXPERIMENTAL DATA
HYDROGEN
MATHEMATICAL MODELS
NICKEL ALLOYS
SILICON
SUBSTRATES