Angle of incidence effects of an oxygen ion beam on the surface chemistry of GaAs

Journal Article · Sat Jan 01 04:00:00 EST 1994 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.587181· OSTI ID:6729750

Solomon, J S; Grant, J T ^[1]

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1. Research Institute, University of Dayton, Dayton, Ohio 45469-0167 (United States)

This article describes the influence of the angle of incidence of the interaction of oxygen ions with GaAs surfaces and the effects these interactions have on compositional quantification by secondary ion mass spectrometry. Both Auger electron and small spot size x-ray photoelectron spectroscopies were used to study the chemistry of the bombarded surfaces. The oxidation states of gallium and arsenic and the overall gallium-to-arsenic ratios were found to vary in a systematic way with angle of incidence. Changes in gallium and arsenic surface chemistry are correlated with secondary ion yields of dopants or impurity atoms.

• OSTI ID: 6729750
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 12:1; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEAR CHEMISTRY
400600* -- Radiation Chemistry
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
AUGER ELECTRON SPECTROSCOPY
BERYLLIUM ADDITIONS
BERYLLIUM ALLOYS
CHARGED PARTICLES
CHEMICAL RADIATION EFFECTS
CHEMICAL REACTIONS
COLLISIONS
ELECTRON SPECTROSCOPY
EMISSION
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INCIDENCE ANGLE
ION COLLISIONS
IONS
KEV RANGE
KEV RANGE 10-100
MASS SPECTROSCOPY
OXIDATION
OXYGEN IONS
PNICTIDES
RADIATION EFFECTS
SECONDARY EMISSION
SILICON ADDITIONS
SILICON ALLOYS
SPECTROSCOPY
SPUTTERING
SURFACE PROPERTIES