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H atom reactions with GaAs l angle 001 r angle

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.344906· OSTI ID:6826516
;  [1]
  1. IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120-6099 (USA)
A GaAs {l angle}001{r angle} crystal at room temperature has been exposed to a flux of hydrogen atoms with and without simultaneous 2-keV argon ion bombardment. A modulated molecular beam mass spectrometric detection system is used to monitor the volatile products evolved from the surface, and {ital in} {ital situ} Auger electron spectroscopy is used to monitor the surface conditions. With the H atom flux alone no volatile products were observed but an arsenic deficiency was seen with Auger electron spectroscopy. With simultaneous H atom exposure and Ar{sup +} bombardment, arsenic hydrides were observed with the mass spectrometer and a larger arsenic deficiency was observed on the processed surface. No gallium hydrides were observed at any time.
OSTI ID:
6826516
Journal Information:
Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 67:9; ISSN 0021-8979; ISSN JAPIA
Country of Publication:
United States
Language:
English