Incidence angle effect of a hydrogen plasma beam for the cleaning of semiconductor surfaces

Journal Article · Mon Aug 21 04:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.101798· OSTI ID:5887665

Suemune, I; Kunitsugu, Y; Kan, Y; Yamanishi, M

Incidence angle effect of a hydrogen plasma beam with an ion energy of about 20 eV was observed in a cleaning process for GaAs and Si surfaces for the first time. An atomically flat (001) GaAs substrate surface which was observed by clear Laue spots was prepared with a glancing angle of incidence. Similar improvement of smoothness was observed with the glancing angle of incidence on a Si surface when it was compared with perpendicular incidence. The mechanism is discussed considering momentum transfer parallel to the surface in the collision process and the resultant migration enhancement on the surface.

• Research Organization: Faculty of Engineering, Hiroshima Univerisity, Shitami, Saijocho, Higashihiroshima 724, Japan (JP)
• OSTI ID: 5887665
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 55:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
CATIONS
CHARGED PARTICLES
CLEANING
COLLISIONS
DIFFUSION
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HYDROGEN IONS
HYDROGEN IONS 1 PLUS
INCIDENCE ANGLE
ION COLLISIONS
IONS
PNICTIDES
SEMIMETALS
SILICON
SURFACE CLEANING
SURFACE FINISHING