Dependence of GaAs etch rate on the angle of incidence of a hydrogen plasma beam excited by electron cyclotron resonance
Journal Article
·
· Applied Physics Letters; (USA)
- Faculty of Engineering, Hiroshima University, Shitami, Saijocho, Higashihiroshima 724, Japan (JP)
Hydrogen (H) plasma irradiation effect on (100) GaAs surfaces was studied. The etching of GaAs surfaces was found to be effectively ceased after some etch at the initial stage when the plasma beam was incident on the surface at a shallow glancing angle. The etched surface was an atomically flat (100) GaAs surface as previously observed by clear Laue spots in the reflection high-energy electron diffraction measurement reported by I. Suemune, Y. Kunitsugu, Y. Kan, and M. Yamanishi (Appl. Phys. Lett. {bold 55}, 760 (1989)). A physical model for the newly found relation between the etch rate and the surface structure is discussed.
- OSTI ID:
- 6814544
- Journal Information:
- Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:24; ISSN APPLA; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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