Selective chemical vapor deposition of tungsten using WF sub 6 and GeH sub 4
- Centre for Submicron Technology, DIMES, Delft University of Technology, P. O. Box 5046, 2600 GA Delft (The Netherlands)
Germane (GeH{sub 4}) has, for the first time, been used as a reducing agent for tungsten hexafluoride in selectively depositing tungsten on silicon. As shown by x-ray diffraction, films deposited below 400 {degree}C consist of the {beta}-W phase with A15 cubic crystal structure. This A15 structure proved to be stabilized by germanium which is probably incorporated in the film as a hitherto unknown W{sub 3}Ge compound. Annealing for 1 h at 575 {degree}C did not change the {beta}-W structure to the low-resistivity body-centered-cubic {alpha} phase of tungsten. The superconducting transition temperature of the films is {approx}3 K. The growth rate dependence on temperature, total pressure, and WF{sub 6}, GeH{sub 4}, and H{sub 2} partial pressure has been investigated. At deposition temperatures above 400 {degree}C the deposited films consist of a mixture of the {beta} and {alpha}-W phase.
- OSTI ID:
- 6725879
- Journal Information:
- Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:4; ISSN APPLA; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360102* -- Metals & Alloys-- Structure & Phase Studies
360104 -- Metals & Alloys-- Physical Properties
ANNEALING
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
FLUORIDES
FLUORINE COMPOUNDS
GERMANIUM COMPOUNDS
GERMANIUM HYDRIDES
HALIDES
HALOGEN COMPOUNDS
HEAT TREATMENTS
HYDRIDES
HYDROGEN COMPOUNDS
KINETICS
METALS
PHYSICAL PROPERTIES
REACTION KINETICS
REFRACTORY METAL COMPOUNDS
SUPERCONDUCTING FILMS
SUPERCONDUCTIVITY
SURFACE COATING
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TRANSITION TEMPERATURE
TUNGSTEN
TUNGSTEN COMPOUNDS
TUNGSTEN FLUORIDES