Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Selective chemical vapor deposition of tungsten using WF sub 6 and GeH sub 4

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.103690· OSTI ID:6725879
; ; ;  [1]
  1. Centre for Submicron Technology, DIMES, Delft University of Technology, P. O. Box 5046, 2600 GA Delft (The Netherlands)

Germane (GeH{sub 4}) has, for the first time, been used as a reducing agent for tungsten hexafluoride in selectively depositing tungsten on silicon. As shown by x-ray diffraction, films deposited below 400 {degree}C consist of the {beta}-W phase with A15 cubic crystal structure. This A15 structure proved to be stabilized by germanium which is probably incorporated in the film as a hitherto unknown W{sub 3}Ge compound. Annealing for 1 h at 575 {degree}C did not change the {beta}-W structure to the low-resistivity body-centered-cubic {alpha} phase of tungsten. The superconducting transition temperature of the films is {approx}3 K. The growth rate dependence on temperature, total pressure, and WF{sub 6}, GeH{sub 4}, and H{sub 2} partial pressure has been investigated. At deposition temperatures above 400 {degree}C the deposited films consist of a mixture of the {beta} and {alpha}-W phase.

OSTI ID:
6725879
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:4; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English