Monolithic photovotaic PbS-on-Si infrared-sensor array

Journal Article · Mon Jan 01 04:00:00 EST 1990 · IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/55.46915· OSTI ID:6715068

Masek, J; Zogg, H; Maissen, C; Blunier, S ^[1]; Ishida, A ^[2]

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1. Arbeitsgemeinschaft fur Industrielle Forschung, Swiss Federal Inst. of Tech., ETH-Honggerberg, CH-8093 Zurich (CH)
2. Shizuoka Univ., Hamamatsu (Japan). Faculty of Engineering

The authors have grown epitaxial narrow-gap PbS-on-Si substrates using a stacked CaF{sub 2}-BaF{sub 2} intermediate buffer layer, and have fabricated linear arrays of photovoltaic infrared (IR) sensors in the PbS layer for the first time. The sensors of the array exhibit resistance-area products at zero bias of 3{Omega}{center dot}cm{sup 2} at 200 K (3.4-{mu}m cutoff wavelength) and 2{center dot}10{sup 5} {Omega}{center dot}cm{sup 2} at 84 K (4-{mu}m cutoff), with corresponding detectivities of 2{center dot}10{sup 10} and 1{center dot}10{sup 13}cm{center dot}{radical}Hz/W, respectively.

• OSTI ID: 6715068
• Journal Information: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 11:1; ISSN EDLED; ISSN 0741-3106
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
440600 -- Optical Instrumentation-- (1990-)
47 OTHER INSTRUMENTATION
CHALCOGENIDES
CONVERSION
DIRECT ENERGY CONVERSION
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY CONVERSION
FABRICATION
INFRARED RADIATION
LEAD COMPOUNDS
LEAD SULFIDES
OPTICAL SYSTEMS
PHOTOVOLTAIC CONVERSION
RADIATIONS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SUBSTRATES
SULFIDES
SULFUR COMPOUNDS