Monolithic CCD imagers in HgCdTe

Journal Article · Wed Feb 01 04:00:00 EST 1995 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.370073· OSTI ID:6577577

Wadsworth, M V; Borrello, S R; Dodge, J; Gooch, R; McCardel, W; Nado, G; Shilhanek, M D ^[1]

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1. Texas Instruments, Dallas, TX (United States). Central Research Labs.

Charge-coupled device (CCD) infrared detector arrays in 5 [mu]m cutoff HgCdTe have been demonstrated for low background applications. These fully monolithic 128 by 28 element CCD arrays incorporate time-delay-and-integrate (TDI) detection, serial readout multiplexing, charge-to-voltage conversion and buffer amplification in the HgCdTe detector chip. Operation of these devices at 77 K have produced average detectivity values exceeding 3 [times] 10[sup 13] cm-Hz[sup 1/2]/W for a background flux level of 6 [times] 10[sup 12] photon/cm[sup 2]-sec in the 3.0 [mu]m to 5.5 [mu]m spectral band. Overall performance data indicates the monolithic HgCdTe CCD to be a promising alternative to present midwave infrared hybrid focal plane array technology.

• OSTI ID: 6577577
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States) Vol. 42:2; ISSN 0018-9383; ISSN IETDAI
• Country of Publication: United States
• Language: English

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CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
CHARGE-COUPLED DEVICES
DEMONSTRATION PROGRAMS
DESIGN
DETECTION
ELECTROMAGNETIC RADIATION
INFRARED RADIATION
MEASURING INSTRUMENTS
MERCURY COMPOUNDS
MERCURY TELLURIDES
PERFORMANCE
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RADIATION DETECTORS
RADIATIONS
SEMICONDUCTOR DEVICES
TELLURIDES
TELLURIUM COMPOUNDS