Monolithic HgCdTe MIS IR detectors with a floating-diode sense mechanism
Journal Article
·
· IEEE Trans. Electron Devices; (United States)
Monolithic charge-transfer devices for use as electronic focal planes in infrared imaging systems have been tested under varying conditions to assess their operating limitations. These devices employ the charge imaging matrix concept (CIM), which uses the potential change on a floating diode for charge detection. Unlike a charge injection device, the CIM READ operation does not involve the recombination of charge carriers. Charge is integrated in a metal-insulator-semiconductor well and then transferred to the sense diode. This allows for very fast READ operations and potentially high (2 MHz) data rates. The responsivity, charge transfer, crosstalk, uniformity, and noise characteristics have been evaluated using small arrays of up to 9 x 8 pixels having diode areas formed by ion implantation with boron. HgCdTe with optical cutoff wavelengths from 9 to 9.5 ..mu..m were used, and tests were conducted at liquid-nitrogen temperature.
- Research Organization:
- Texas Instruments Inc., Dallas, TX 75265
- OSTI ID:
- 7111142
- Journal Information:
- IEEE Trans. Electron Devices; (United States), Journal Name: IEEE Trans. Electron Devices; (United States) Vol. ED-33:10; ISSN IETDA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
BORON
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
CHARGE CARRIERS
DESIGN
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
FREQUENCY RANGE
IMAGE PROCESSING
INFRARED RADIATION
ION IMPLANTATION
MEASURING INSTRUMENTS
MERCURY COMPOUNDS
MERCURY TELLURIDES
MHZ RANGE
MHZ RANGE 01-100
MIS TRANSISTORS
NOISE
OPERATION
PERFORMANCE TESTING
PHYSICAL PROPERTIES
PROCESSING
RADIATION DETECTORS
RADIATIONS
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE DEPENDENCE
TESTING
TRANSISTORS
WAVELENGTHS
360603 -- Materials-- Properties
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
BORON
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
CHARGE CARRIERS
DESIGN
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
FREQUENCY RANGE
IMAGE PROCESSING
INFRARED RADIATION
ION IMPLANTATION
MEASURING INSTRUMENTS
MERCURY COMPOUNDS
MERCURY TELLURIDES
MHZ RANGE
MHZ RANGE 01-100
MIS TRANSISTORS
NOISE
OPERATION
PERFORMANCE TESTING
PHYSICAL PROPERTIES
PROCESSING
RADIATION DETECTORS
RADIATIONS
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE DEPENDENCE
TESTING
TRANSISTORS
WAVELENGTHS