A monolithically integrated InGaAs-InP p-i-n/JFET focal plane array

Journal Article · Mon Apr 01 04:00:00 EST 1996 · IEEE Photonics Technology Letters

OSTI ID:227922

Kim, D S; Forrest, S R ^[1]; Lange, M J; Olsen, G H ^[2]; Kosonocky, W ^[3]

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1. Princeton Univ., NJ (United States)
2. Sensors Unlimited, Princeton, NJ (United States)
3. New Jersey Inst. of Tech., Newark, NJ (United States). Dept. of Electrical and Computer Engineering

The authors describe a monolithic InGaAs-InP focal plane array for near-infrared imaging. The array consists of an InGaAs p-i-n diode as a photodetector integrated with an InP junction field effect transistor (JFET) as a switching element for each pixel. In order to minimize the drain and gate leakage to achieve high-detection sensitivity, a novel p-encapsulation JFET was employed. Arrays as large as 16 x 16 were fabricated, consisting of 528 devices integrated into a single array with >99% individual device yield. This array represents significant progress in InP-based materials and integration technologies.

• OSTI ID: 227922
• Journal Information: IEEE Photonics Technology Letters, Journal Name: IEEE Photonics Technology Letters Journal Issue: 4 Vol. 8; ISSN 1041-1135; ISSN IPTLEL
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
DESIGN
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
NEAR INFRARED RADIATION
PHOTODETECTORS
RADIATION DETECTION
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DIODES
USES