Simple realization of a monolithic integrated photoreceiver for 10Gbit/s using an InP/InGaAs heterostructure
Book
·
OSTI ID:536205
- Inst. of Thin Film and Ion Technology, Juelich (Germany)
A novel monolithic integrated photoreceiver for 10 Gbit/s long-wavelength optoelectronic transmission systems is presented. The photoreceiver consists of an MSM photodetector and a HEMT amplifier, prepared on an identical InGaAs/InP 2DEG layer structure. Design considerations, preparation procedure and optoelectronic properties of the photoreceiver under 1.3 {micro}m wavelength illumination are presented. The MSM photodetectors exhibit a 3dB bandwidth of 16 GHz and the HEMT amplifiers have the cut-off frequency f{sub T} of 45 GHz and f{sub max} of 85 GHz. A bandwidth of 16 GHz can be achieved on optimized integrated photoreceivers.
- OSTI ID:
- 536205
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
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