Frequency response of InP/InGaAs MSM photodetector with current transport along 2DEG
Book
·
OSTI ID:536204
- Inst. of Thin Film and Ion Technology, Juelich (Germany)
The optoelectronic properties of a novel metal-semiconductor-metal (MSM) photodetector (PD) are investigated. The MSM PD uses the same layer structure and processing procedure as needed for the fabrication of High Electron Mobility Transistors (HEMT), offering new possibilities of the realization of monolithic integrated photoreceivers. The measured 3dB bandwidth of 16 GHz at 1.3 {micro}m wavelength for devices with 0.5 {micro}m finger-spacing and -width is, to the authors` knowledge, the widest reported bandwidth on InGaAs MSM-PDs up to now.
- OSTI ID:
- 536204
- Report Number(s):
- CONF-960498--; ISBN 0-7803-3283-0
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:554832