Monolithically integrated InGaAs/InP MSM-FET photoreceiver prepared by chemical beam epitaxy
- AT and T Bell Labs., Murray Hill, NJ (US)
The authors demonstrate the first monolithic integration of a metal-semiconductor-metal (MSM) InGaAs photodetector with an FET and resistors into a high-impedance front-end photoreceiver circuit. The sample was grown in a single step by chemical beam epitaxy, and standard processing steps for making FET's were used to fabricate the receiver circuit. Semi-insulating Fe-doped InP layers were used as the insulating gate of the FET, the barrier enhancement layer in the MSM photodetector, and the electrical isolation layer between the photodetector and the electronic circuit. A bit error rate of less than 10{sup {minus} 9} at 200 Mbits/s has been achieved with this preliminary circuit for an optical power of {minus} 17 dBm.
- OSTI ID:
- 6971855
- Journal Information:
- IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Vol. 2:1; ISSN 1041-1135
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
36 MATERIALS SCIENCE
GALLIUM ARSENIDES
OPTICAL PROPERTIES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
INTEGRATED CIRCUITS
FABRICATION
PHOTODETECTORS
CHEMICAL VAPOR DEPOSITION
EPITAXY
FIELD EFFECT TRANSISTORS
IRON ADDITIONS
RESISTORS
SOLAR RECEIVERS
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
DEPOSITION
ELECTRICAL EQUIPMENT
ELECTRONIC CIRCUITS
EQUIPMENT
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
IRON ALLOYS
MICROELECTRONIC CIRCUITS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SURFACE COATING
TRANSISTORS
440600* - Optical Instrumentation- (1990-)
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)
360600 - Other Materials