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CMOS-compatible InP/InGaAs digital photoreceiver

Patent ·
OSTI ID:871214
 [1];  [1];  [1];  [2]
  1. Albuquerque, NM
  2. Cary, NC
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A digital photoreceiver is formed monolithically on an InP semiconductor substrate and comprises a p-i-n photodetector formed from a plurality of InP/InGaAs layers deposited by an epitaxial growth process and an adjacent heterojunction bipolar transistor (HBT) amplifier formed from the same InP/InGaAs layers. The photoreceiver amplifier operates in a large-signal mode to convert a detected photocurrent signal into an amplified output capable of directly driving integrated circuits such as CMOS. In combination with an optical transmitter, the photoreceiver may be used to establish a short-range channel of digital optical communications between integrated circuits with applications to multi-chip modules (MCMs). The photoreceiver may also be used with fiber optic coupling for establishing longer-range digital communications (i.e. optical interconnects) between distributed computers or the like. Arrays of digital photoreceivers may be formed on a common substrate for establishing a plurality of channels of digital optical communication, with each photoreceiver being spaced by less than about 1 mm and consuming less than about 20 mW of power, and preferably less than about 10 mW. Such photoreceiver arrays are useful for transferring huge amounts of digital data between integrated circuits at bit rates of up to about 1000 Mb/s or more.

Research Organization:
SANDIA CORP
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
US 5684308
OSTI ID:
871214
Country of Publication:
United States
Language:
English

References (9)

Integrated InP/GaInAs heterojunction bipolar photoreceiver journal January 1988
A monolithically integrated photoreceiver compatible with InP/InGaAs HBT fabrication process journal April 1994
High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with simple phototransistor structure journal November 1993
Eight-channel p-i-n/HBT monolithic receiver array at 2.5 Gb/s per channel for WDM applications journal October 1994
Low-power, parallel photonic interconnections for multi-chip module applications conference January 1995
4 Gbit/s pin/HBT monolithic photoreceiver journal January 1990
Low-power, high-speed InGaAs/InP photoreceiver for highly-parallel optical data links conference January 1995
Ultra-high speed p-i-n/HBT monolithic OEIC photoreceiver journal January 1991
A 10 Gbit/s OEIC photoreceiver using InP/InGaAs heterojunction bipolar transistors journal January 1992

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