Low-power, high-speed InGaAs/InP photoreceiver for highly-parallel optical data links
Conference
·
OSTI ID:102409
- and others
Low-power photoreceivers based on InGaAs/InP heterojunction bipolar transistors (HBTs) and p-i-n diodes for highly-parallel optical data links have been designed, fabricated and characterized. The receivers and designed to operate from 980 nm to over 1.3 {mu}m and interface directly with 3.3 V CMOS. SPICE was utilized to investigate circuit topographies that minimize power dissipation while maintaining large signal operation required to interface directly with CMOS. Low-power dissipation of {approximately}10 mW/channel has been achieved at bit rates up to 800 Mbits/sec. Performance characteristics of discrete HBTs and of low-power photoreceivers fabricated with p-i-n/HBT circuits are reported.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 102409
- Report Number(s):
- SAND--95-1299C; CONF-951097--1; ON: DE95017549
- Country of Publication:
- United States
- Language:
- English
Similar Records
CMOS-compatible InP/InGaAs digital photoreceiver
CMOS-compatible InP/InGaAs digital photoreceiver
Ultra-low-power, long-wavelength photoreceivers for massively-parllel optical data links
Patent
·
Mon Nov 03 23:00:00 EST 1997
·
OSTI ID:551040
CMOS-compatible InP/InGaAs digital photoreceiver
Patent
·
Tue Dec 31 23:00:00 EST 1996
·
OSTI ID:871214
Ultra-low-power, long-wavelength photoreceivers for massively-parllel optical data links
Conference
·
Thu Feb 29 23:00:00 EST 1996
·
OSTI ID:228440