Photovoltaic lead-chalcogenide on silicon infrared sensor arrays

Journal Article · Sun May 01 04:00:00 EDT 1994 · Optical Engineering; (United States)

DOI:https://doi.org/10.1117/12.165808· OSTI ID:7274806

Zogg, H; Fach, A; Maissen, C; Masek, J; Blunier, S ^[1]

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1. Swiss Federal Inst. of Technology, Zuerich (Switzerland)

MBE growth and infrared device fabrication with epitaxial IV-VI layers on Si substrates are reviewed. Epitaxy on Si substrates is achieved using a stacked BaF[sub 2]/CaF[sub 2] or CaF[sub 2] buffer layer. With buffers containing no BaF[sub 2], standard photolithographic delineation with wet-etching techniques can be used. Photovoltaic IV-VI sensors with cutoff wavelengths ranging from 3 to 14 [mu]m are fabricated in PbS, PbSe[sub 1[minus]x]S[sub x], PbEu[sub 1[minus]x]Se[sub x], PbTe, or Pb[sub 1[minus]x]Sn[sub x]Se layers on Si(111) substrates. They offer the possibility for low-cost infrared focal plane arrays with sensitivities similar to Hg[sub 1[minus]x]Cd[sub x]Te, but with much less demanding material processing steps. A 13-mm-long linear array with 10.5-[mu]m cutoff wavelength has inhomogeneities in cutoff below 0.1 [mu]m. Some arrays were on prefabricated active Si substrates containing the whole readout circuits.First thermal images using these chips are demonstrated. The induced mechanical strain resulting from the different thermal expansion of IV-VIs and Si relaxes down to cryogenic temperatures even after many temperature cycles because of dislocation glide in the main [100] glide planes.

• OSTI ID: 7274806
• Journal Information: Optical Engineering; (United States), Journal Name: Optical Engineering; (United States) Vol. 33:5; ISSN 0091-3286; ISSN OPEGAR
• Country of Publication: United States
• Language: English

Related Subjects

440500* -- Thermal Instrumentation-- (1990-)
47 OTHER INSTRUMENTATION
ALKALINE EARTH METAL COMPOUNDS
BARIUM COMPOUNDS
BARIUM FLUORIDES
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CALCIUM COMPOUNDS
CALCIUM FLUORIDES
CALCIUM HALIDES
CHALCOGENIDES
DETECTION
ELECTROMAGNETIC RADIATION
ELEMENTS
EPITAXY
EXPANSION
FABRICATION
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
INFRARED RADIATION
LEAD COMPOUNDS
MEASURING INSTRUMENTS
MERCURY COMPOUNDS
MERCURY TELLURIDES
MOLECULAR BEAM EPITAXY
PHOTODIODES
RADIATION DETECTION
RADIATION DETECTORS
RADIATIONS
READOUT SYSTEMS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
TELLURIDES
TELLURIUM COMPOUNDS
THERMAL EXPANSION