Aging tests of low threshold current InGaAsP/InP V-grooved substrate buried heterostructure lasers emitting at 1. 3-. mu. m wavelength

Journal Article · Fri Oct 01 04:00:00 EDT 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93616· OSTI ID:6711708

Imai, H; Ishikawa, H; Hori, K; Takahei, K

Aging tests of InGaAsP/InP V-grooved substrate buried heterostructure lasers have performed. The cw threshold current of these lasers is around 20 mA at 25 /sup 0/C. The laser are tested at 10, 50, and 70 /sup 0/C with a constant optical power of 5 mW/facet and are still operating at over 5000 h with only a slight increase in the driving current. The far-field pattern and lasing spectrum do not change appreciably during aging, and self-pulsation is not observed after aging.

• Research Organization: Fujitsu Laboratories Ltd., 1015 Kamikodanaka Nakahara-ku, Kawasaki 211, Japan
• OSTI ID: 6711708
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AGING
ARSENIC COMPOUNDS
ARSENIDES
CONFIGURATION
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
JUNCTIONS
LASERS
LIFETIME
MEDIUM TEMPERATURE
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PULSATIONS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SPECTRA
SUBSTRATES
THRESHOLD CURRENT
WAVELENGTHS