Influence of ion-implanted profiles on the performance of GaAs MESFET's and MMIC amplifiers

Technical Report · Fri Apr 01 00:00:00 EST 1988

OSTI ID:6708676

Pavlidis, D; Cazaux, J L; Graffeuil, J

The RF small-signal performance of GaAs MESFET's and MMIC amplifiers as a function of various ion-implanted profiles is theoretically and experimentally investigated. Implantation energy, dose, and recess depth influence are theoretically analyzed with the help of a specially developed device simulator. The performance of MMIC amplifiers processed with various energies, doses, recess depths, and bias conditions is discussed and compared to experimental characteristics. Some criteria are finally proposed for the choice of implantation conditions and process in order to optimize the characteristics of ion-implanted FET's and to realize process-tolerant MMIC amplifiers.

• Research Organization: Michigan Univ., Ann Arbor (USA). Dept. of Electrical Engineering and Computer Science
• OSTI ID: 6708676
• Report Number(s): AD-A-196339/6/XAB
• Resource Relation: Other Information: Pub. in IEEE Transactions on Microwave Theory and Techniques, Vol. 36, No. 4, 642-652(Apr 1988)
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
AMPLIFIERS
ION IMPLANTATION
FIELD EFFECT TRANSISTORS
INTEGRATED CIRCUITS
DEPTH
ENERGY
SIGNALS
DIMENSIONS
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
MICROELECTRONIC CIRCUITS
SEMICONDUCTOR DEVICES
TRANSISTORS
420800* - Engineering- Electronic Circuits & Devices- (-1989)