Improvement of breakdown voltage in InGaP/InGaAs/GaAs heterostructure MESFETs for MMICs
Conference
·
OSTI ID:405391
- NTT LSI Lab., Kanagawa (Japan); and others
This paper describes the trade-off between breakdown voltage and RF performance of InGaP/InGaAs/GaAs heterostructure MESFETs for power amplifiers and oscillators in multi-function MMICs in the millimeter-wave range. The authors successfully improved both gate-drain and drain-source breakdown voltages while maintaining excellent high-frequency performance by using a double-layered gate consisting of WSiN with different nitrogen contents, and by varying epitaxial layer thickness and implantation dose.
- OSTI ID:
- 405391
- Report Number(s):
- CONF-951097--
- Country of Publication:
- United States
- Language:
- English
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