Analysis of parametric drift of a MESFET-based GaAs MMIC due to 125[degrees]C storage

Conference · Tue Dec 31 23:00:00 EST 1991

OSTI ID:6970577

Dreike, P L; Barton, D L; Sandoval, C E

Microwave parameters drifted significantly for two out of twenty- nine GaAs MESFET-based MMICs during ten weeks of storage at 125[degrees]C and 150[degrees]C. Analysis using measured, post- storage, FET characteristics and the microwave behavior indicates that all of the FETs in the MMICs drifted, most likely due to contamination.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6970577
• Report Number(s): SAND-92-2073C; CONF-930354--1; ON: DE93000715
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606 -- Other Materials-- Physical Properties-- (1992-)
42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
ELECTRICAL TESTING
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MATERIALS TESTING
MICROSTRUCTURE
NONDESTRUCTIVE TESTING
PHYSICS
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE PHYSICS
TEMPERATURE DEPENDENCE
TESTING
TRANSISTORS