Analysis of parametric drift of a MESFET-based GaAs MMIC due to 125{degrees}C storage
Conference
·
OSTI ID:10185895
Microwave parameters drifted significantly for two out of twenty- nine GaAs MESFET-based MMICs during ten weeks of storage at 125{degrees}C and 150{degrees}C. Analysis using measured, post- storage, FET characteristics and the microwave behavior indicates that all of the FETs in the MMICs drifted, most likely due to contamination.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 10185895
- Report Number(s):
- SAND--92-2073C; CONF-930354--1; ON: DE93000715
- Country of Publication:
- United States
- Language:
- English
Similar Records
Analysis of parametric drift of a MESFET-based GaAs MMIC due to 125[degrees]C storage
Influence of ion-implanted profiles on the performance of GaAs MESFET's and MMIC amplifiers
Improvement of breakdown voltage in InGaP/InGaAs/GaAs heterostructure MESFETs for MMICs
Conference
·
Tue Dec 31 23:00:00 EST 1991
·
OSTI ID:6970577
Influence of ion-implanted profiles on the performance of GaAs MESFET's and MMIC amplifiers
Technical Report
·
Thu Mar 31 23:00:00 EST 1988
·
OSTI ID:6708676
Improvement of breakdown voltage in InGaP/InGaAs/GaAs heterostructure MESFETs for MMICs
Conference
·
Sat Dec 30 23:00:00 EST 1995
·
OSTI ID:405391