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AlGaAs/GaInP heterojunction tunnel diode

Conference · · AIP Conference Proceedings (American Institute of Physics); (United States)
OSTI ID:6683841
; ; ;  [1]
  1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911 (United States)
A [ital p][sup +]-AlGaAs/[ital n][sup +]-GaInP heterojunction tunnel diode with band gap [ital E][sub [ital g]][approx]1.9 eV was fabricated by Atomic Layer Epitaxy growth mode using carbon and selenium as the [ital p]- and [ital n]-type dopants, respectively. The doping levels of 1[times]10[sup 20]/cm[sup 3] and 5[times]10[sup 19]/cm[sup 3] were achieved both in the [ital p]- and [ital n]-side of the diode, respectively. The diode can be used as the interconnection of the high and low band gap cells in the AlGaAs/GaAs cascade solar cell structure. At the forward current of 15 A/cm[sup 2], which is the expected current density at 1000 suns operation, there is only [similar to]17 mV voltage drop across the tunnel junction. This is the first reported tunnel diode fabricated in high band gap material systems, with performances that exceed the best reported GaAs tunnel diode.
OSTI ID:
6683841
Report Number(s):
CONF-9205115--
Conference Information:
Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Journal Volume: 268:1
Country of Publication:
United States
Language:
English