Al[sub 0. 3]Ga[sub 0. 7]As/GaAs heterojunction tunnel diode for tandem solar cell applications

Conference · Thu Jun 30 04:00:00 EDT 1994 · AIP Conference Proceedings (American Institute of Physics); (United States)

OSTI ID:7258134

Eldallal, G M; Hayafuji, N; Elwaffa, M S.A.; Elgammal, M A; Bedair, S M ^[1]

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1. North Carolina State University, Department of Electrical and Computer Engineering, Raleigh, North Carolina 27695-7911 (United States)

A p[sup +]-Al[sub 0.3]Ga[sub 0.7]As/n[sup +]-GaAs heterojunction tunnel diode was fabricated using Atomic Layer Epitaxy (ALE) growth technique. Background carbon doping of [similar to]10[sup 20] cm[sup [minus]3] was achieved in the p-side of the diode by optimizing growth conditions such as V/III ratio, exposure times to reactant gases, and growth temperature. In the n-side of the diode GaAs was doped with silane and doping concentrations as high as 7[times]10[sup 18] cm[sup [minus]3] were also achieved. The dopants are chosen to satisfy the high levels and low diffusion requirements. The diode can be used to interconnect the high and low band-gap cells in the AlGaAs/GaAs cascade solar cell structure. The reactor used in this investigation is a commercial MOCVD system which has been specially modified for dual operation of ALE and MOCVD growth modes.

• OSTI ID: 7258134
• Report Number(s): CONF-9310273--
• Conference Information: Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Journal Volume: 306:1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALLOYS
CARBON ADDITIONS
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
EPITAXY
EQUIPMENT
GALLIUM ARSENIDE SOLAR CELLS
HETEROJUNCTIONS
JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
TUNNEL DIODES