AlGaAs tunnel diode
Journal Article
·
· J. Appl. Phys.; (United States)
An AlGaAs tunnel diode with a band gap of 1.6 eV has been fabricated. This diode provides a suitable connecting junction between the high- and low-band gap cells of a cascade solar-cell structure operating at several hundred suns concentration without causing any appreciable loss in efficiency.
- Research Organization:
- Research Triangle Institute, Research Triangle Park, North Carolina 27709
- OSTI ID:
- 5886189
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 50:11; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM
ARSENIC COMPOUNDS
ARSENIDES
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
ENERGY GAP
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTIONS
METALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SOLAR CELLS
TUNNEL DIODES
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM
ARSENIC COMPOUNDS
ARSENIDES
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
ENERGY GAP
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTIONS
METALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SOLAR CELLS
TUNNEL DIODES