cw argon laser annealing of ion-implanted silicon
Journal Article
·
· Appl. Phys. Lett.; (United States)
We report on the annealing behavior of ion-implanted silicon exposed to cw argon laser radiation. The quality of the annealing was studied using channeling, in situ reflectivity, phase-contrast microscopy, and electrical resistivity. Strong dependence of anneal quality on laser power, crystal orientation, and implant dose is reported. Reflectivity measurements with a focused probing laser show that the onset of annealing occurs just below the melting point, and the annealing extends into the region where a thin layer of liquid silicon is formed at the crystal surface. We conclude that the physical mechanism responsible for crystal recovery is similar to the solid-state epitaxial regrowth observed for over-annealed samples.
- Research Organization:
- Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 6674872
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:6; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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