Study of the mechanism of cw laser annealing of arsenic-implanted silicon

Journal Article · Sun Apr 01 04:00:00 EST 1979 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.326213· OSTI ID:6119036

Gat, A; Lietoila, A; Gibbons, J F

In this paper we report on experiments designed to study the mechanism by which a continuous scanning laser anneals implantation-amorphized silicon. A stationary Ar laser beam was used to irradiate an As-implanted Si sample at constant power for different anneal times. The size of the annealed spot was found to increase with exposure time. The annealing spot size was also calculated for each exposure time by assuming the laser annealing mechanism to be a simple solid-phase epitaxial regrowth. Comparison of experiment and theory suggests that, at least for amorphous layers, the cw laser simply heats the substrate to a temperature where solid-phase epitaxial regrowth can occur quickly.

• Research Organization: Stanford Electronics Laboratories, Stanford, California 94305
• OSTI ID: 6119036
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 50:4; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANNEALING
ARSENIC IONS
ATOMIC IONS
CHARGED PARTICLES
ELECTROMAGNETIC RADIATION
ELEMENTS
EPITAXY
HEAT TREATMENTS
HEATING
IONS
LASER RADIATION
LASER-RADIATION HEATING
PHYSICAL RADIATION EFFECTS
PLASMA HEATING
RADIATION EFFECTS
RADIATIONS
SEMIMETALS
SILICON