Laser annealing of ion implanted silicon

Conference · Sun Apr 15 04:00:00 EST 1979 · AIP (Am. Inst. Phys.) Conf. Proc.; (United States)

OSTI ID:6260307

White, C W; Narayan, J; Young, R T

The physical and electrical properties of ion implanted silicon annealing with high powered ruby laser radiation are summarized. Results show that pulsed laser annealing can lead to a complete removal of extended defects in the implanted region accompanied by incorporation of dopants into lattice sites even when their concentration far exceeds the solid solubility limit. Implanted dopants are redistributed considerably by pulsed laser annealing, and parameters influencing the profiles are discussed. Calculations and experimental results provide strong evidence that the pulsed laser annealing mechanism involves melting of the crystal to a depth of several thousand angstroms, dopant diffusion in liquid silicon, and subsequent liquid phase epitaxial regrowth from the underlying substrate. The application of pulsed laser irradiation to materials processing areas other than ion implantation is briefly discussed.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
• OSTI ID: 6260307
• Report Number(s): CONF-781121-
• Conference Information: Journal Name: AIP (Am. Inst. Phys.) Conf. Proc.; (United States) Journal Volume: 50:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ANTIMONY IONS
ARSENIC IONS
ATOMIC IONS
BEAMS
BORON IONS
CHARGED PARTICLES
COPPER IONS
CRYSTAL DOPING
ELECTRICAL PROPERTIES
ELEMENTS
HEAT TREATMENTS
HEATING
ION BEAMS
ION IMPLANTATION
IONS
IRON IONS
LASER-RADIATION HEATING
LASERS
MELTING
PHASE TRANSFORMATIONS
PHOSPHORUS IONS
PHYSICAL PROPERTIES
PLASMA HEATING
RUBY LASERS
SEMIMETALS
SILICON
SOLID STATE LASERS