Laser annealing of ion implanted silicon

Journal Article · Wed Apr 01 04:00:00 EST 1981 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1981.4331515· OSTI ID:6666766

White, C W ^[1]; Appleton, B R; Wilson, S R

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1. Oak Ridge National Lab., TN

Pulsed laser annealing of ion implanted silicon leads to the formation of supersaturated alloys by nonequilibrium crystal growth processes occurring at the interface during liquid phase epitaxial regrowth. The interfacial distribution coefficients from the melt (k') and the maximum substitutional solubilities (C/sub s//sup max/) are far greater than equilibrium values. Both k' and C/sub s//sup max/ are functions of growth velocity. Mechanisms limiting substitutional solubilities are discussed.

• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 6666766
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-28:2; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
360605 -- Materials-- Radiation Effects
ANNEALING
ANTIMONY
ARSENIC
BISMUTH
BORON
CRYSTAL GROWTH
DATA
ELEMENTS
EPITAXY
EXPERIMENTAL DATA
GALLIUM
HEAT TREATMENTS
HEATING
INDIUM
INFORMATION
ION IMPLANTATION
LASER-RADIATION HEATING
LASERS
METALS
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
PLASMA HEATING
RADIATION EFFECTS
RECRYSTALLIZATION
SEMIMETALS
SILICON