Laser annealing of ion implanted silicon
Conference
·
OSTI ID:6825453
Pulsed laser annealing of ion implanted silicon leads to the formation of supersaturated alloys by nonequilibrium crystal growth processes at the interface occurring during liquid phase epitaxial regrowth. The interfacial distribution coefficients from the melt (k') and the maximum substitutional solubilities (C/sub s//sup max/) are far greater than equilibrium values. Both K' and C/sub s//sup max/ are functions of growth velocity. Mechanisms limiting substitutional solubilities are discussed. 5 figures, 2 tables.
- Research Organization:
- Oak Ridge National Lab., TN (USA); Motorola, Inc., Phoenix, AZ (USA)
- DOE Contract Number:
- W-7405-ENG-26
- OSTI ID:
- 6825453
- Report Number(s):
- CONF-801111-17
- Country of Publication:
- United States
- Language:
- English
Similar Records
Laser annealing of ion implanted silicon
Kinetic effects and mechanisms limiting substitutional solubility in the formation of supersaturated alloys by pulsed laser annealing
Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group-III and group-V dopants in silicon
Journal Article
·
Tue Mar 31 23:00:00 EST 1981
· IEEE Trans. Nucl. Sci.; (United States)
·
OSTI ID:6666766
Kinetic effects and mechanisms limiting substitutional solubility in the formation of supersaturated alloys by pulsed laser annealing
Conference
·
Fri Oct 31 23:00:00 EST 1980
·
OSTI ID:6863441
Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group-III and group-V dopants in silicon
Journal Article
·
Mon Dec 31 23:00:00 EST 1979
· J. Appl. Phys.; (United States)
·
OSTI ID:5748287
Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ALLOYS
ANNEALING
ANTIMONY ADDITIONS
ANTIMONY ALLOYS
ARSENIC ADDITIONS
ARSENIC ALLOYS
BISMUTH ADDITIONS
BISMUTH ALLOYS
CRYSTALS
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY RANGE
GALLIUM ADDITIONS
GALLIUM ALLOYS
HEAT TREATMENTS
INDIUM ADDITIONS
INDIUM ALLOYS
ION IMPLANTATION
KEV RANGE
KEV RANGE 10-100
KEV RANGE 100-1000
LASER RADIATION
MONOCRYSTALS
PNICTIDES
RADIATIONS
SATURATION
SEMIMETALS
SILICON
SILICON ALLOYS
SOLUBILITY
SUPERSATURATION
360605* -- Materials-- Radiation Effects
ALLOYS
ANNEALING
ANTIMONY ADDITIONS
ANTIMONY ALLOYS
ARSENIC ADDITIONS
ARSENIC ALLOYS
BISMUTH ADDITIONS
BISMUTH ALLOYS
CRYSTALS
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY RANGE
GALLIUM ADDITIONS
GALLIUM ALLOYS
HEAT TREATMENTS
INDIUM ADDITIONS
INDIUM ALLOYS
ION IMPLANTATION
KEV RANGE
KEV RANGE 10-100
KEV RANGE 100-1000
LASER RADIATION
MONOCRYSTALS
PNICTIDES
RADIATIONS
SATURATION
SEMIMETALS
SILICON
SILICON ALLOYS
SOLUBILITY
SUPERSATURATION