Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group-III and group-V dopants in silicon

Journal Article · Tue Jan 01 04:00:00 EST 1980 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.327334· OSTI ID:5748287

White, C W; Wilson, S R; Appleton, B R; Young, Jr, F W

The formation of supersaturated substitutional alloys by ion implantation and rapid liquid-phase-epitaxial regrowth induced by pulsed laser annealing has been studied using Rutherford backscattering, ion channeling analysis. Group-III (Ga, In) and group-V (As, Sb, Bi) dopants have been implanted into single-crystal silicon at doses ranging from 1 x 10/sup 15/ to 1 x 10/sup 17//cm/sup 2/. The samples were annealed with a Q-switched ruby laser (energy density approx.1.5 J/cm/sup 2/, pulse duration approx.15 x 10/sup -9/ sec). Ion channeling analysis shows that laser annealing incorporates these dopants into substitutional lattice sites at concentrations far in excess of the equilibrium solid solubility. Channeling measurements indicate the silicon crystal is essentially defect free after laser annealing. Also values for the maximum dopant concentration (C/sup max//sub s/) that can be incorporated into substitutional lattice sites are determined for our annealing conditions. Dopant profiles determined by Rutherford backscattering are compared to model calculations which incorporate both dopant diffusion in liquid silicon and a distribution coefficient from the liquid. It is necessary to assume an interfacial distribution coefficient (k') far greater than the equilibrium value k/sub 0/ to fit the experimental data. The relationship of C/sup max//sub s/ and k' to the formation of these supersaturated alloys is discussed.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
• OSTI ID: 5748287
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
ALLOYS
ANNEALING
BACKSCATTERING
CRYSTAL DOPING
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CRYSTALS
DATA
DOPED MATERIALS
ELASTIC SCATTERING
ELEMENTS
EPITAXY
HEAT TREATMENTS
HEATING
INFORMATION
ION IMPLANTATION
LASER-RADIATION HEATING
LASERS
MONOCRYSTALS
PLASMA HEATING
PULSES
Q-SWITCHING
QUANTITY RATIO
RUBY LASERS
RUTHERFORD SCATTERING
SCATTERING
SEMIMETALS
SILICON
SOLID STATE LASERS