Formation of supersaturated alloys by ion implantation and pulsed-laser annealing
Technical Report
·
OSTI ID:5796395
Supersaturated substitutional alloys formed by ion implantation and rapid liquid-phase epitaxial regrowth induced by pulsed-laser annealing have been studied using Rutherford-backscattering and ion-channeling analysis. A series of impurities (As, Sb, Bi, Ga, In, Fe, Zn, Cu) have been implanted into single-crystal (001) orientation silicon at doses ranging from 1 x 10/sup 15//cm/sup 2/ to 1 x 10/sup 17//cm/sup 2/. The samples were subsequently annealed with a Q-switched ruby laser (energy density approx. 1.5 J/cm/sup 2/, pulse duration 15 x 10/sup -9/ sec). Ion-channeling analysis shows that laser annealing incorporates (Ga, In) and (As, Sb, Bi) impurities into substitutional lattice sites at concentrations far in excess of the equilibrium solid solubility. Channeling measurements indicate the silicon crystal is essentially defect free after laser annealing.
- Research Organization:
- North Texas State Univ., Denton (USA)
- DOE Contract Number:
- EY-76-C-05-0033
- OSTI ID:
- 5796395
- Report Number(s):
- ORO-0033-T1
- Country of Publication:
- United States
- Language:
- English
Similar Records
Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group-III and group-V dopants in silicon
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Lattice location of As and Sb implanted in silicon after annealing with a pulsed ruby laser
Journal Article
·
Mon Dec 31 23:00:00 EST 1979
· J. Appl. Phys.; (United States)
·
OSTI ID:5748287
Lattice location of As and Sb implanted in silicon after annealing with a pulsed ruby laser. [Implanted with 100 keV /sup 75/As and /sup 121/Sb]
Conference
·
Thu Nov 30 23:00:00 EST 1978
·
OSTI ID:6362746
Lattice location of As and Sb implanted in silicon after annealing with a pulsed ruby laser
Conference
·
Sat Apr 14 23:00:00 EST 1979
· AIP (Am. Inst. Phys.) Conf. Proc.; (United States)
·
OSTI ID:6196354
Related Subjects
36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
ANNEALING
ANTIMONY
ARSENIC
BISMUTH
COPPER
DIFFUSION
DOPED MATERIALS
ELEMENTS
EPITAXY
GALLIUM
HEAT TREATMENTS
IMPURITIES
INDIUM
ION IMPLANTATION
IRON
LASERS
METALS
SEMIMETALS
SILICON
SORPTIVE PROPERTIES
SURFACE PROPERTIES
TRANSITION ELEMENTS
ZINC
360104* -- Metals & Alloys-- Physical Properties
ANNEALING
ANTIMONY
ARSENIC
BISMUTH
COPPER
DIFFUSION
DOPED MATERIALS
ELEMENTS
EPITAXY
GALLIUM
HEAT TREATMENTS
IMPURITIES
INDIUM
ION IMPLANTATION
IRON
LASERS
METALS
SEMIMETALS
SILICON
SORPTIVE PROPERTIES
SURFACE PROPERTIES
TRANSITION ELEMENTS
ZINC