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Lattice location of As and Sb implanted in silicon after annealing with a pulsed ruby laser. [Implanted with 100 keV /sup 75/As and /sup 121/Sb]

Conference ·
OSTI ID:6362746
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The lattice location of implanted arsenic and antimony in single crystal silicon ((100) orientation) after pulsed laser annealing was studied using positive ion channeling-backscattering. The samples were implanted with 100 keV /sup 75/As or /sup 121/Sb to doses in the range 1 x 10/sup 15/ to 3 x 10/sup 16//cm/sup 2/ and subsequently annealed using the Q-switched output of a pulsed ruby laser (1.5 to 1.7 J/cm/sup 2/, approx. 50 x 10/sup -9/ sec pulse duration). Channeling measurements (2.5 MeV He/sup +/ ions) along major axial directions ((100), (110), and (111)) and detailed scans across the axes were used to determine the lattice location of the implanted dopants after annealing. In the dose range investigated, 98 to 99% of the As occupy substitutional sites. Antimony doses less than 1.5 x 10/sup 16//cm/sup 2/ yield similar results. Electrical measurements of the number of electrically active dopants support the high substitutional fractions observed by the ion channeling-backscattering measurements. Also reported are channeling results for /sup 75/As implanted (approx. 1 x 10/sup 16/ As/cm/sup 2/) samples that were annealed with an electron beam generator. Substitutional fractions (97 to 99%) comparable to laser annealing were obtained, but some nonuniformities across the samples were observed that were not present in the laser annealed samples.
Research Organization:
Oak Ridge National Lab., TN (USA)
DOE Contract Number:
W-7405-ENG-26
OSTI ID:
6362746
Report Number(s):
CONF-781167-3
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
360102 -- Metals & Alloys-- Structure & Phase Studies
ANNEALING
ANTIMONY 121
ANTIMONY IONS
ANTIMONY ISOTOPES
ARSENIC 75
ARSENIC IONS
ARSENIC ISOTOPES
ATOMIC IONS
CHARGED PARTICLES
CRYSTAL DOPING
DOPED MATERIALS
ELEMENTS
HEAT TREATMENTS
INTERMEDIATE MASS NUCLEI
ION IMPLANTATION
IONS
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
LASERS
LATTICE PARAMETERS
NUCLEI
ODD-EVEN NUCLEI
RADIOISOTOPES
SECONDS LIVING RADIOISOTOPES
SEMIMETALS
SILICON
STABLE ISOTOPES