Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Lattice location of implanted As and Sb in silicon after pulsed laser annealing

Conference ·
OSTI ID:6782868
; ; ;
The substitutional fractions for As and Sb implanted into silicon and subjected to pulsed laser annealing have been determined using ion channeling techniques. Substitutional fractions of 98 to 99% are achieved by laser annealing for both of these dopants at doses up to approximately 1.4 x 10/sup 16//cm/sup 2/. Channeling results are also presented showing the effect of different laser energy densities on the removal of lattice damage and the incorporation of As into substitutional lattice sites.
Research Organization:
Oak Ridge National Lab., TN (USA)
DOE Contract Number:
W-7405-ENG-26
OSTI ID:
6782868
Report Number(s):
CONF-780932-6
Country of Publication:
United States
Language:
English

Similar Records

Lattice location of As and Sb implanted in silicon after annealing with a pulsed ruby laser
Conference · Sat Apr 14 23:00:00 EST 1979 · AIP (Am. Inst. Phys.) Conf. Proc.; (United States) · OSTI ID:6196354
Lattice location of As and Sb implanted in silicon after annealing with a pulsed ruby laser. [Implanted with 100 keV /sup 75/As and /sup 121/Sb]
Conference · Thu Nov 30 23:00:00 EST 1978 · OSTI ID:6362746
Solid-phase-epitaxial growth of ion implanted silicon using CW laser and electron beam annealing
Journal Article · Fri Dec 31 23:00:00 EST 1982 · Mater. Res. Soc. Symp. Proc.; (United States) · OSTI ID:6615880

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ANTIMONY IONS
ARSENIC IONS
ATOMIC IONS
CHANNELING
CHARGED PARTICLES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ELEMENTS
HEAT TREATMENTS
ION CHANNELING
ION IMPLANTATION
IONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON