Solid-phase-epitaxial growth of ion implanted silicon using CW laser and electron beam annealing

Journal Article · Sat Jan 01 04:00:00 EST 1983 · Mater. Res. Soc. Symp. Proc.; (United States)

OSTI ID:6615880

Narayan, J; Holland, O W; Olson, G L

The nature of residual damage in As/sup +/, Sb/sup +/, and In/sup +/ implanted silicon after CW laser and e/sup -/ beam annealing has been studied using plan-view and cross-section electron microscopy. Lattice location of implanted atoms and their concentrations were determined by Rutherford backscattering and channeling techniques. Maximum substitutional concentrations achieved by furnace annealing in a temperature range of 500-600/sup 0/C have been previously reported and greatly exceeded the retrograde solubility limits for all dopants studied. Higher temperatures and SPE growth rates characteristic of electron or CW laser annealing did not lead to greater incorporation of dopant within the lattice and often resulted in dopant precipitation. Dopant segregation at the surface was sometimes observed at higher temperatures.

• Research Organization: Oak Ridge National Lab., TN
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 6615880
• Journal Information: Mater. Res. Soc. Symp. Proc.; (United States), Journal Name: Mater. Res. Soc. Symp. Proc.; (United States) Vol. 13; ISSN MRSPD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ANNEALING
BEAMS
CRYSTAL GROWTH
DOPED MATERIALS
ELECTROMAGNETIC RADIATION
ELECTRON BEAMS
ELEMENTS
EPITAXY
HEAT TREATMENTS
ION IMPLANTATION
LASER RADIATION
LEPTON BEAMS
MATERIALS
PARTICLE BEAMS
RADIATIONS
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE