Solid-phase-epitaxial growth and formation of metastable alloys in ion implanted silicon

Journal Article · Sat Oct 01 04:00:00 EDT 1983 · J. Vac. Sci. Technol., B; (United States)

DOI:https://doi.org/10.1116/1.582708· OSTI ID:5581322

Narayan, J; Holland, O W; Appleton, B R

Transmission electron microscopy (cross-section and plan-view) and ion backscattering techniques have been combined to study the details of solid-phase-epitaxial (SPE) growth in Sb/sup +/, In/sup +/, Bi/sup +/, Ga/sup +/, and As/sup +/ implanted silicon after furnace annealing in the temperature range 450 to 650 /sup 0/C. The ion implanted amorphous layer grew ''defect-free'' in <001> orientations and the crystalline--amorphous (c--a) interface during growth contained undulations approx.5 A over the intervals of 200--500 A. During SPE growth in <111> orientations, the c--a interface was atomically smooth initially, but eventually became nonplanar due to the formation of twins. From SPE growth rates at different temperatures, the activation energy associated with the growth was determined to be 2.6 +- 0.3 eV. The dopant concentrations in defect-free SPE grown layers were found to exceed equilibrium solid solubility limits by as much as a factor of 560 in the Si--Bi system. The absolute maximum concentrations, corresponding to the intersections of free-energy versus composition curves of amorphous and crystalline silicon, were calculated and the results were compared with the observed concentrations. The observed concentrations, which were found to depend upon the amorphous state or free energy of as-implanted silicon, approached the calculated limits in the case of the Si--Sb and Si--As systems. However, for the Si--In, Si--Ga, and Si--Bi systems, interfacial segregation and solute redistribution during SPE growth prevented the maximum achievable concentrations.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 5581322
• Journal Information: J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 1:4; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation &amp; Manufacture
360602* -- Other Materials-- Structure &amp; Phase Studies
ACTIVATION ENERGY
ALLOYS
AMORPHOUS STATE
ANNEALING
ANTIMONY IONS
ARSENIC IONS
BACKSCATTERING
BISMUTH IONS
CHANNELING
CHARGED PARTICLES
CHEMICAL COMPOSITION
CONTAMINATION
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRON MICROSCOPY
ELEMENTS
ENERGY
ENERGY LEVELS
EPITAXY
EXCITED STATES
FREE ENERGY
GALLIUM IONS
HEAT TREATMENTS
HIGH TEMPERATURE
IMPURITIES
INDIUM IONS
INTERFACES
ION CHANNELING
ION IMPLANTATION
IONS
JUNCTIONS
LAYERS
MATERIALS
METASTABLE STATES
MICROSCOPY
ORIENTATION
P-N JUNCTIONS
PHYSICAL PROPERTIES
QUANTITY RATIO
SCATTERING
SEGREGATION
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON ALLOYS
SOLUBILITY
SURFACE CONTAMINATION
THERMODYNAMIC PROPERTIES
TRANSMISSION ELECTRON MICROSCOPY