Formation of metastable supersaturated solid solutions in ion implanted silicon during solid phase crystallization

Journal Article · Sun Aug 01 04:00:00 EDT 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93480· OSTI ID:5197101

Narayan, J; Holland, O W

We have investigated maximum solubility limits and extended defects in Si-Sb, Si-In, Si-Ga, Si-Bi, and Si-As systems after ion implantation and solid phase epitaxial growth in the temperature range 450-600 /sup 0/C. The maximum concentration of solutes in ''defect-free'' layers were found to exceed the respective retrograde solubility limits by as much as a factor of 560 in Si-Bi system. The maximum concentrations depended upon the substrate temperature and the ion current during implantations, which presumably affected the degree of amorphousness or free energy of as- implanted silicon.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 5197101
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ALLOYS
ANTIMONY ALLOYS
ARSENIC ALLOYS
BISMUTH ALLOYS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALLIZATION
DATA
DISPERSIONS
ELEMENTS
EPITAXY
EXPERIMENTAL DATA
GALLIUM ALLOYS
HIGH TEMPERATURE
INDIUM ALLOYS
INFORMATION
ION IMPLANTATION
MIXTURES
NUMERICAL DATA
PHASE TRANSFORMATIONS
PNICTIDES
QUANTITY RATIO
SATURATION
SEMIMETALS
SILICON
SILICON ALLOYS
SOLID SOLUTIONS
SOLIDS
SOLUBILITY
SOLUTIONS
SUPERSATURATION
TEMPERATURE DEPENDENCE