Studies of defects and solubility limits in SPE grown in- and Sb-implanted silicon
Conference
·
OSTI ID:6537396
Transmission electron microscopy and Rutherford backscattering, channeling techniques have been used to study residual defects and substitutional concentrations of In and Sb in solid-phase-epitaxial (SPE) recrystallized amorphous layers. The substitutional concentrations of In and Sb ions were found to far exceed the thermodynamic solubility limits in relatively defect-free SPE-grown layers. The RBS results are discussed in view of the observed TEM microstructures.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- W-7405-ENG-26
- OSTI ID:
- 6537396
- Report Number(s):
- CONF-810446-3(Draft)
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ALLOYS
ANTIMONY ADDITIONS
ANTIMONY ALLOYS
ANTIMONY IONS
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELASTIC SCATTERING
ELECTRON MICROSCOPY
ELEMENTS
INDIUM ADDITIONS
INDIUM ALLOYS
INDIUM IONS
ION IMPLANTATION
IONS
MICROSCOPY
MICROSTRUCTURE
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RUTHERFORD SCATTERING
SCATTERING
SEMIMETALS
SILICON
360605* -- Materials-- Radiation Effects
ALLOYS
ANTIMONY ADDITIONS
ANTIMONY ALLOYS
ANTIMONY IONS
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELASTIC SCATTERING
ELECTRON MICROSCOPY
ELEMENTS
INDIUM ADDITIONS
INDIUM ALLOYS
INDIUM IONS
ION IMPLANTATION
IONS
MICROSCOPY
MICROSTRUCTURE
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RUTHERFORD SCATTERING
SCATTERING
SEMIMETALS
SILICON