Studies of defects and limits of solid solubility in SPE grown In and Sb implanted silicon

Conference · Sun Nov 01 04:00:00 EST 1981

OSTI ID:5728547

Narayan, J; Holland, O W

Transmission electron microscopy (plan-view as well as cross-section) and high-resolution Rutherford backscattering and channeling techniques have been combined to investigate residual defects and substitutional concentrations of In and Sb in <100> and <111> orientations of ion implanted silicon layers after solid-phase-epitaxial (SPE) growth at 475 to 600/sup 0/C. The maximum concentrations of Sb and In in substitutional sites were found to be, respectively, 1.3 x 10/sup 21/ and 5.0 x 10/sup 19/ cm/sup -3/, exceeding the respective retrograde maxima by factors of 18 and 60. These results provide direct evidence of solute trapping and metastable alloying under solid-phase growth conditions. Accumulation of solute at the crystalline-amorphous interface was observed only for indium above a certain interfacial concentration. At still higher interfacial concentrations, the planar interface was observed to become unstable and SPE growth was retarded.

• Research Organization: Oak Ridge National Lab., TN (USA)
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 5728547
• Report Number(s): CONF-811122-35(Draft); ON: DE82003986
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360106 -- Metals &amp; Alloys-- Radiation Effects
640301* -- Atomic
Molecular &amp; Chemical Physics-- Beams &amp; their Reactions
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANTIMONY
DATA
DEPTH DOSE DISTRIBUTIONS
ELEMENTS
EPITAXY
EXPERIMENTAL DATA
HEAT TREATMENTS
INDIUM
INFORMATION
ION IMPLANTATION
METALS
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
RADIATION DOSE DISTRIBUTIONS
RADIATION EFFECTS
RANGE
SPATIAL DOSE DISTRIBUTIONS