Pulsed laser annealing of ion implanted Ge
Conference
·
OSTI ID:5035738
Ion backscattering/channeling and transmission electron microscopy (TEM) were used to investigate the annealing behavior of ion implanted Ge single crystals using a Q-switched ruby laser. The impurities studied were Bi, In, Sb and Pb, which were implanted at liquid nitrogen temperature into both (100) and (111) crystal orientations. A rather unique damage structure which can form during room temperature implantation of Ge is discussed. Maximum substitutional concentrations, which far exceed the retrograde maxima, are reported for all the dopants studied in (100)Ge. The maximum concentrations were limited by an interfacial instability during epitaxial growth following laser irradiation which led to the formation of a well-defined cellular structure. 6 figures.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- W-7405-ENG-26
- OSTI ID:
- 5035738
- Report Number(s):
- CONF-821185-6; ON: DE84007525
- Country of Publication:
- United States
- Language:
- English
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