Comparison of effects of pulsed Ruby laser and pulsed electron beam annealing of 75AS+ implanted silicon
Ion-backscattering, ion-channeling, and transmission electron microscopy (TEM) were used to study a series of ion implanted silicon samples that were annealed with either a pulsed laser or a pulsed electron beam. Single crystal ((001) orientation) silicon samples were implanted with either 35 or 100 keV /sup 75/As/sup +/ to a dose of approx. 1 x 10/sup 16/ As/cm/sup 2/ and subsequently annealed with either a Q-switched pulsed Ruby laser or the electron beam generator. A series of energy densities was used in both cases to optimize results. It was determined from backscattering that the as-implanted profiles were redistributed in essentially the same manner for both types of anneals, indicating that melting and rapid recrystallization has occurred. For the 35 keV /sup 75/As/sup +/ implanted samples the two techniques produced equivalent anneals with no remaining damage as indicated by channeling and TEM. However, for the 100 keV implants the anneal was not uniform across the sample in the electron beam case and the channeling minimum yields for the major axes ((110), (111), and (100)) were higher than the laser annealed results. In both cases, the As substitutionality (97 to 99%) and minimum yields are better than results obtained from conventional thermal annealing.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-7405-ENG-26
- OSTI ID:
- 6155123
- Report Number(s):
- CONF-781121--21
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360101* -- Metals & Alloys-- Preparation & Fabrication
360102 -- Metals & Alloys-- Structure & Phase Studies
ANNEALING
ARSENIC 75
ARSENIC ISOTOPES
BEAMS
CHANNELING
CRYSTAL-PHASE TRANSFORMATIONS
ELECTRON BEAMS
ELEMENTS
HEAT TREATMENTS
INTERMEDIATE MASS NUCLEI
ION CHANNELING
ION IMPLANTATION
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
LASERS
LEPTON BEAMS
MELTING
NUCLEI
ODD-EVEN NUCLEI
PARTICLE BEAMS
PHASE TRANSFORMATIONS
RADIOISOTOPES
RECRYSTALLIZATION
SECONDS LIVING RADIOISOTOPES
SEMIMETALS
SILICON
STABLE ISOTOPES