Comparison of effects of pulsed ruby laser and pulsed electron beam annealing of /sup 75/As/sup +/ implanted silicon

Conference · Sun Apr 15 04:00:00 EST 1979 · AIP (Am. Inst. Phys.) Conf. Proc.; (United States)

OSTI ID:6196305

Wilson, S R; Appleton, B R; White, C W; Narayan, J

Ion-backscattering, ion-channeling, and transmission electron microscopy (TEM) have been used to study a series of ion implanted silicon samples that have been annealed with either a pulsed laser or a pulsed electron beam. Single crystal ((001) orientation) silicon samples were implanted with either 35 or 100 keV /sup 75/As/sup +/ to a dose of approx.1 x 10/sup 16/ As/cm/sup 2/ and subsequently annealed with either a Q-switched pulsed Ruby laser or the Spire Corporation SPI-PULSE 5000 electron beam generator. A series of energy densities was used in both cases to optimize results. It was determined from Rutherford backscattering that the as-implanted profiles have been redistributed in essentially the same manner for both types of anneals, and this indicates that melting and rapid recrystallization has occurred. For the 35 keV /sup 75/As/sup +/ implanted samples the two techniques produced equivalent anneals with no remaining damage as indicated by channeling and TEM. However, for the 100 keV implants the anneal was not uniform across the sample in the electron beam case and the channeling minimum yields for the major axes ((110), (111), and (100)) were higher than the laser annealed results. In both cases, however, the As substitutionality (97--99%) and minimum yields are better than results obtained from conventional thermal annealing.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
• OSTI ID: 6196305
• Report Number(s): CONF-781121-
• Conference Information: Journal Name: AIP (Am. Inst. Phys.) Conf. Proc.; (United States) Journal Volume: 50:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC 75
ARSENIC ISOTOPES
BEAMS
ELECTRON BEAMS
ELEMENTS
HEAT TREATMENTS
HEATING
INTERMEDIATE MASS NUCLEI
ION IMPLANTATION
IRRADIATION
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
LASER-RADIATION HEATING
LASERS
LEPTON BEAMS
NUCLEI
ODD-EVEN NUCLEI
PARTICLE BEAMS
PLASMA HEATING
PULSED IRRADIATION
RADIOISOTOPES
RUBY LASERS
SECONDS LIVING RADIOISOTOPES
SEMIMETALS
SILICON
SOLID STATE LASERS
STABLE ISOTOPES