Comparison of pulsed electron beam-annealed and pulsed ruby laser-annealed ion-implanted silicon. [100keV As/sup +/]

Conference · Wed Nov 01 04:00:00 EST 1978

OSTI ID:6345616

Wilson, S R ^[1]; Appleton, B R; White, C W; Narayan, J; Greenwald, A C

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1. Oak Ridge National Lab., TN

Recently two new techniques, pulsed electron beam annealing and pulsed laser annealing, have been developed for processing ion-implanted silicon. These two types of anneals have been compared using ion-channeling, ion back-scattering, and transmission electron microscopy (TEM). Single crystal samples were implanted with 100 keV As/sup +/ ions to a dose of approx. 1 x 10/sup 16/ ions/cm/sup 2/ and subsequently annealed by either a pulsed Ruby laser or a pulsed electron beam. Our results show in both cases that the near-surface region has melted and regrown epitaxially with nearly all of the implanted As (97 to 99%) incroporated onto lattice sites. The analysis indicates that the samples are essentially defect free and have complete electrical recovery.

• Research Organization: Oak Ridge National Lab., TN (USA); Spire Corp., Bedford, MA (USA)
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 6345616
• Report Number(s): CONF-781113-24
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
ANNEALING
ARSENIC
ARSENIC COMPOUNDS
ARSENIDES
BACKSCATTERING
BEAMS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DOPED MATERIALS
ELECTRON BEAMS
ELECTRON MICROSCOPY
ELEMENTS
FABRICATION
HEAT TREATMENTS
ION IMPLANTATION
LASERS
LEPTON BEAMS
MICROSCOPY
PARTICLE BEAMS
PNICTIDES
SCATTERING
SEMIMETALS
SILICON
SILICON ARSENIDES
SILICON COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY