Laser annealing of ion implanted silicon
Conference
·
OSTI ID:6318853
The physical and electrical properties of ion implanted silicon annealed with high powered ruby laser radiation are summarized. Results show that pulsed laser annealing can lead to a complete removal of extended defects in the implanted region accompanied by incorporation of dopants into lattice sites even when their concentration far exceeds the solid solubility limit.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- W-7405-ENG-26
- OSTI ID:
- 6318853
- Report Number(s):
- CONF-781167-2
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
ANNEALING
ANTIMONY
ARSENIC
BORON
COPPER
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DEFECTS
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELEMENTS
HEAT TREATMENTS
ION IMPLANTATION
IRON
JUNCTIONS
LASERS
METALS
MICROSTRUCTURE
NONMETALS
P-N JUNCTIONS
PHOSPHORUS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
REMOVAL
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
TRANSITION ELEMENTS
360104* -- Metals & Alloys-- Physical Properties
ANNEALING
ANTIMONY
ARSENIC
BORON
COPPER
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DEFECTS
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELEMENTS
HEAT TREATMENTS
ION IMPLANTATION
IRON
JUNCTIONS
LASERS
METALS
MICROSTRUCTURE
NONMETALS
P-N JUNCTIONS
PHOSPHORUS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
REMOVAL
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
TRANSITION ELEMENTS