Laser induced redistribution of ion implanted and surface deposited B in silicon: A SIMS study
Conference
·
OSTI ID:5837432
SIMS investigations have shown that pulsed laser annealing of ion implanted and surface deposited silicon leads to significant dopant redistribution. Comparison of calculated profiles to SIMS determined profiles provides strong evidence that the laser annealing mechanism involves melting of the crystal, diffusion of dopants in liquid silicon, followed by epitaxial regrowth.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- W-7405-ENG-26
- OSTI ID:
- 5837432
- Report Number(s):
- CONF-790863-1
- Country of Publication:
- United States
- Language:
- English
Similar Records
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Sat Apr 14 23:00:00 EST 1979
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Related Subjects
36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
ANNEALING
BORON
DAMAGE
DEPOSITION
DIFFUSION
DOPED MATERIALS
ELECTROMAGNETIC RADIATION
ELEMENTS
HEAT TREATMENTS
ION IMPLANTATION
LASER RADIATION
MIGRATION
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMIMETALS
SILICON
SURFACE COATING
360102* -- Metals & Alloys-- Structure & Phase Studies
ANNEALING
BORON
DAMAGE
DEPOSITION
DIFFUSION
DOPED MATERIALS
ELECTROMAGNETIC RADIATION
ELEMENTS
HEAT TREATMENTS
ION IMPLANTATION
LASER RADIATION
MIGRATION
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMIMETALS
SILICON
SURFACE COATING