Electrical properties and annealing kinetics study of laser-annealed ion-implanted silicon

Conference · Sun Apr 15 04:00:00 EST 1979 · AIP (Am. Inst. Phys.) Conf. Proc.; (United States)

OSTI ID:6228493

Wang, K L; Liu, Y S; Kirkpatrick, C G; Possin, G E

This paper describes measurements of electrical properties and the regrowth behavior of ion-implanted silicon annealed with an 80-ns (FWHM) laser pulse at 1.06 ..mu..m. The experimental results include: (1) a determination of threshold energy density required for melting using a transient optical reflectivity technique, (2) measurements of dopant distribution using Rutherford backscattering spectroscopy, (3) characterization of electrical properties by measuring reverse leakage current densities of laser-annealed and thermal-annealed mesa diodes, (4) determination of annealed junction depth using an electron-beam-induced-current technique, and (5) a deep-level-transient spectroscopic study of residual defects. In particular, by measuring these properties of a diode annealed at a condition near the threshold energy density for liquid phase epitaxial regrowth, we have found certain correlations among these various annealing behaviors and electrical properties of laser-annealed ion-implanted silicon diodes.

• Research Organization: General Electric Research and Development Center, Schenectady, New York 12301
• OSTI ID: 6228493
• Report Number(s): CONF-781121-
• Conference Information: Journal Name: AIP (Am. Inst. Phys.) Conf. Proc.; (United States) Journal Volume: 50:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ANNEALING
ARSENIC IONS
ATOMIC IONS
CHARGED PARTICLES
ELECTRICAL PROPERTIES
ELEMENTS
EVEN-EVEN NUCLEI
HEAT TREATMENTS
HEATING
ION IMPLANTATION
IONS
IRRADIATION
ISOTOPES
LASER-RADIATION HEATING
LIGHT NUCLEI
NUCLEI
PHYSICAL PROPERTIES
PLASMA HEATING
SELF-IRRADIATION
SEMIMETALS
SILICON
SILICON 28
SILICON ISOTOPES
STABLE ISOTOPES