MBE growth, characterization, and electronic-device processing of HgCdTe, HgZnTe, related heterojunctions, and HgCdTe-CdTe superlattices. Annual report

Technical Report · Thu Dec 31 00:00:00 EST 1987

OSTI ID:6669558

Faurie, J P

A report is made on growth and characterization of high-quality HgCdTe epilayers, MBE growth and characterization of two-inch diameter p- and n-type Hg(1-x)Cd(X)Te films on GaAs(100) substrate. The n-type intrinsic and extrinsic doping is discussed. The incorporation of As was photo-assisted using a Nd-YAG pulsed laser. X-ray photoemission of Hg clusters on Hg(1-x)Cd(x)Te surfaces was studied. Direct measurement by XPS and electrical determination of HgTe-CdTe valence-band discontinuity give values of 300-400 meV at 300K. Silicon was used as a n-type dopant to grow a homojunction which electrical characteristics are presented here.

• Research Organization: Illinois Univ., Chicago (USA)
• OSTI ID: 6669558
• Report Number(s): AD-A-197752/9/XAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
HETEROJUNCTIONS
MOLECULAR BEAM EPITAXY
SUPERLATTICES
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
NEODYMIUM LASERS
PHOTOELECTRIC EMISSION
PROCESSING
PROGRESS REPORT
SILICON
TELLURIDES
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
DOCUMENT TYPES
ELECTRON EMISSION
ELEMENTS
EMISSION
EPITAXY
GALLIUM COMPOUNDS
JUNCTIONS
LASERS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SOLID STATE LASERS
TELLURIUM COMPOUNDS
360601* - Other Materials- Preparation & Manufacture
420800 - Engineering- Electronic Circuits & Devices- (-1989)