MBE growth, characterization, and electronic-device processing of HgCdTe, HgZnTe, related heterojunctions, and HgCdTe-CdTe superlattices. Annual report

Technical Report · Thu Dec 31 04:00:00 EST 1987

OSTI ID:6669558

Faurie, J P

A report is made on growth and characterization of high-quality HgCdTe epilayers, MBE growth and characterization of two-inch diameter p- and n-type Hg(1-x)Cd(X)Te films on GaAs(100) substrate. The n-type intrinsic and extrinsic doping is discussed. The incorporation of As was photo-assisted using a Nd-YAG pulsed laser. X-ray photoemission of Hg clusters on Hg(1-x)Cd(x)Te surfaces was studied. Direct measurement by XPS and electrical determination of HgTe-CdTe valence-band discontinuity give values of 300-400 meV at 300K. Silicon was used as a n-type dopant to grow a homojunction which electrical characteristics are presented here.

• Research Organization: Illinois Univ., Chicago (USA)
• OSTI ID: 6669558
• Report Number(s): AD-A-197752/9/XAB
• Country of Publication: United States
• Language: English

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ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
DOCUMENT TYPES
ELECTRICAL PROPERTIES
ELECTRON EMISSION
ELEMENTS
EMISSION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASERS
MOLECULAR BEAM EPITAXY
NEODYMIUM LASERS
PHOTOELECTRIC EMISSION
PHYSICAL PROPERTIES
PNICTIDES
PROCESSING
PROGRESS REPORT
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SOLID STATE LASERS
SUPERLATTICES
TELLURIDES
TELLURIUM COMPOUNDS