MBE (molecular beam epitaxial) growth characterization and electronic-device processing of HgCdTe, HgZnTe, related heterojunctions and HgCdTe-CdTe superlattices: quarterly report, June 15, 1987

Technical Report · Mon Jun 15 04:00:00 EDT 1987

OSTI ID:5475060

Faurie, J P

As the MBE growth technique has continued to improve for Hg(1-x)Cd(x)Te films, the prospects for films of larger area have begun to be explored. These larger area films are important for imaging arrays and will be especially vital in the future for the efficient production of Hg(1-x)Cd(x)Te material. The growth of MBE of uniform Hg(1-x)Cd(x)Te epilayer on a large substrate is very difficult to achieve because of the non-uniform distribution of the fluxes and on the non-uniform temperature of the substrate.

• Research Organization: Chicago Univ., IL (USA). Dept. of Physics
• OSTI ID: 5475060
• Report Number(s): AD-A-187416/3/XAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
DOCUMENT TYPES
EPITAXY
FABRICATION
HETEROJUNCTIONS
JUNCTIONS
MERCURY COMPOUNDS
MERCURY TELLURIDES
MOLECULAR BEAM EPITAXY
PROGRESS REPORT
SEMICONDUCTOR JUNCTIONS
SUBSTRATES
SUPERLATTICES
TELLURIDES
TELLURIUM COMPOUNDS
ZINC COMPOUNDS
ZINC TELLURIDES