MBE growth, characterization, and electronic-device processing of HgCdTe, HgZnTe, related heterojunctions, and HgCdTe-CdTe superlattices. Quarterly report

Technical Report · Tue Sep 15 04:00:00 EDT 1987

OSTI ID:7045640

Faurie, J P

A strong emphasis has been laid recently on the characterization of HgCdTe epilayers by a double x-ray rocking curve. A careful examination of what has been up to now reported is far from being conclusive. In fact, what is claimed as world record is only one particular point on a crystal. Above all, nobody has presently established a clear relationship between the FWHM of X-ray Rocking-Curve peak and the electrical characteristics of this HgCdTe layer. The author received his x-ray equipment during the Summer 87 and have started our own investigations. What we have in mind is (1) to understand the relationship between FWHM of the substrate - FWHM of the epilayer, (2) to establish a relationship between FWHM mobility and carrier lifetime for a given HgCdTe MBE layer grown under very well established growth conditions. We have already characterized numerous substrates and HgCdTe epilayers grown in the (111) orientation on CdTe and CdZnTe substrates.

• Research Organization: Illinois Univ., Chicago (USA). Dept. of Physics
• OSTI ID: 7045640
• Report Number(s): AD-A-195172/2/XAB
• Country of Publication: United States
• Language: English

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CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
DOCUMENT TYPES
ELECTRICAL PROPERTIES
EPITAXY
HETEROJUNCTIONS
JUNCTIONS
MERCURY COMPOUNDS
MERCURY TELLURIDES
MOLECULAR BEAM EPITAXY
PHYSICAL PROPERTIES
PROCESSING
PROGRESS REPORT
SEMICONDUCTOR JUNCTIONS
SUBSTRATES
SUPERLATTICES
TELLURIDES
TELLURIUM COMPOUNDS
ZINC COMPOUNDS
ZINC TELLURIDES