MBE growth, characterization, and electronic-device processing of HgCdTe, HgZnTe, related heterojunctions, and HgCdTe-CdTe superlattices. Semiannual technical report

Technical Report · Tue Jun 30 04:00:00 EDT 1987

OSTI ID:6565279

Faurie, J P

The author reports on growth and characterization of high-quality HgCdTe grown on CdTe, CdZnTe, CdTeSi, and GaAs substrate. A p-type layer grown on a two-inch diameter GaAs (100) substrate exhibiting an excellent uniformity in composition was also grown. Extrinsic dopants such as In, As, Sb and Li were investigated and heterojunctions were grown in situ. Incorporation of mercury in CdTe layers during the growth of HgTe-CdTe superlattices is also reported.

• Research Organization: Sunflower Army Ammunition Plant, Lawrence, KS (USA)
• OSTI ID: 6565279
• Report Number(s): AD-A-198421/0/XAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
DOCUMENT TYPES
ELECTRONIC EQUIPMENT
EPITAXY
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LAYERS
MERCURY COMPOUNDS
MERCURY TELLURIDES
MOLECULAR BEAM EPITAXY
PNICTIDES
PROCESSING
PROGRESS REPORT
SEMICONDUCTOR JUNCTIONS
SILICIDES
SILICON COMPOUNDS
SUBSTRATES
SUPERLATTICES
TELLURIDES
TELLURIUM COMPOUNDS
ZINC COMPOUNDS
ZINC TELLURIDES