MBE growth, characterization, and electronic-device processing of HgCdTe, HgZnTe, related heterojunctions, and HgCdTe-CdTe superlattices. Semiannual technical report

Technical Report · Tue Jun 30 00:00:00 EDT 1987

OSTI ID:6565279

Faurie, J P

The author reports on growth and characterization of high-quality HgCdTe grown on CdTe, CdZnTe, CdTeSi, and GaAs substrate. A p-type layer grown on a two-inch diameter GaAs (100) substrate exhibiting an excellent uniformity in composition was also grown. Extrinsic dopants such as In, As, Sb and Li were investigated and heterojunctions were grown in situ. Incorporation of mercury in CdTe layers during the growth of HgTe-CdTe superlattices is also reported.

• Research Organization: Sunflower Army Ammunition Plant, Lawrence, KS (USA)
• OSTI ID: 6565279
• Report Number(s): AD-A-198421/0/XAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ELECTRONIC EQUIPMENT
HETEROJUNCTIONS
MOLECULAR BEAM EPITAXY
SUPERLATTICES
CADMIUM TELLURIDES
GALLIUM ARSENIDES
LAYERS
MERCURY TELLURIDES
PROCESSING
PROGRESS REPORT
SILICIDES
SUBSTRATES
ZINC COMPOUNDS
ZINC TELLURIDES
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CHALCOGENIDES
DOCUMENT TYPES
EPITAXY
EQUIPMENT
GALLIUM COMPOUNDS
JUNCTIONS
MERCURY COMPOUNDS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SILICON COMPOUNDS
TELLURIDES
TELLURIUM COMPOUNDS
360601* - Other Materials- Preparation & Manufacture
420800 - Engineering- Electronic Circuits & Devices- (-1989)